ION ASSISTED DEPOSITION

In IAD, a broad beam ion source directs a dispersed ion beam with a range of ion energies toward the substrate typically along with a sputter or electron beam source. An inert gas such as Ar or reactive gases such as O2 and N2 can be used to provide additional chemical reactions during film growth. IAD processes allow advanced process film growth through surface reactions, film density control, and improved adhesion.

Let Angstrom Engineering improve your process capabilities through the addition of an ion source to your process. Angstrom Engineering’s software solutions allow for precise control of these elaborate simultaneous processes.

Available on these systems:
Nexdep | Åmod | EvoVac | Custom